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宽禁带技术
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宽禁带技术的实际应用已经达到了临界点，它的作用和功效不可否认。无论你是在探索碳化硅（SiC）还是氮化镓（GaN）电源解决方案，都可深入了解安富利关于宽禁带技术不断发展中的最新信息。
When GaN is too fast for your application, consider SiC instead
By
Avnet Staff
-
2023年4月24日
The best power converters are not always the ones that switch the fastest. Gallium Nitride (GaN) switches faster than other power transistors, but sometimes it is too fast. Silicon Carbide (SiC) MOSFETs may sometimes be a better option.
您知道碳化硅品质优值（Figures of Merit）的重要性吗
2022年10月15日
碳化硅半导体在电力转换设备中越来越普遍，特别是在电动汽车、太阳能和储能系统领域。本文回顾了它的各种应用，并探讨可用于器件比较的碳化硅品质优值（Figures of Merit）。
How wide bandgap semiconductors are improving renewable energy design
2022年7月13日
While silicon served us admirably for half a century, engineers are turning to wide bandgap technologies such as silicon carbide and gallium nitride to increase converter/inverter efficiency as momentum to harness renewable energy increases.
使用宽带隙器件做电路设计时的注意事项
By
Milan Ivkovic
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2022年5月30日
碳化硅和氮化镓宽带隙半导体开关可以为功率转换器的能效带来进一步的提高。工程师应该知道，与Si-MOSFETS 和IGBT 相比，它们具有不同的次级特性。
针对电机控制应用选择宽带隙器件
By
Milan Ivkovic
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2022年5月30日
当涉及智能控制应用时，我们需要冷静考虑是否从MOSFET或IGBT转换到宽带隙器件更有意义。如果答案是肯定的，那么方能决定采用碳化硅还是氮化镓。
借助 SiC 技术，实现三大设计自由
By
Milan Ivkovic
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2021年4月17日
尽管 SiC 技术的性能和潜力毋庸置疑，但一些设计人员最初可能仍然会犹豫不决，无法下定决心使用 SiC 技术来处理新项目
The undeniable advantages of SiC technology over Si
By
Milan Ivkovic
-
2021年4月16日
Silicon carbide (SiC) technology has reached the tipping point, the state when undeniable advantages push a technology into rapid adoption.
宽禁带技术
Filter By
宽禁带技术的实际应用已经达到了临界点，它的作用和功效不可否认。无论你是在探索碳化硅（SiC）还是氮化镓（GaN）电源解决方案，都可深入了解安富利关于宽禁带技术不断发展中的最新信息。
Understanding trade-offs for DC-DC converters in EV charging
By
Avnet Staff
-
2024年6月24日
Within EV fast charging technologies, focus is on the crucial role of DC-DC converters in enabling efficient energy transfer. The design will be influenced by the primary commercial objective.
Designing Vienna Rectifiers for EV Chargers
By
Avnet Staff
-
2024年6月24日
As the EV charging infrastructure grows, EVSE providers need to offer a choice. Cost, efficiency and reliability are trade-offs that begin at the component level and move quickly to the converter topology.
When GaN is too fast for your application, consider SiC instead
By
Avnet Staff
-
2023年4月24日
The best power converters are not always the ones that switch the fastest. Gallium Nitride (GaN) switches faster than other power transistors, but sometimes it is too fast. Silicon Carbide (SiC) MOSFETs may sometimes be a better option.
Combining GaN and SiC for cost-effective power conversion
By
Avnet Staff
-
2023年4月20日
The public image of silicon carbide (SiC) and gallium nitride (GaN) is as wonder materials. We know they are displacing older silicon technology, boosting the efficiency of power conversion stages. However, neither is a universal solution.
Understand practical GaN and SiC differences for EV onboard chargers
By
Avnet Staff
-
2023年4月18日
Depending on the design, wide bandgap devices may provide efficiency gains in power conversion for onboard chargers. But which do you choose over silicon if any? We look at the options and offer some advice.
The undeniable advantages of SiC technology over Si
By
Milan Ivkovic
-
2022年12月5日
SiC will soon overtake Si as the dominant semiconductor material for power devices with voltage rating higher than 600V. Designers looking to stay competitive and lower long-term system costs are turning to SiC-based technologies good reason.
How wide bandgap semiconductors are improving renewable energy design
2022年7月13日
While silicon served us admirably for half a century, engineers are turning to wide bandgap technologies such as silicon carbide and gallium nitride to increase converter/inverter efficiency as momentum to harness renewable energy increases.
A closer look at SiC quality
2022年6月27日
Silicon carbide builds on established manufacturing methodologies but requires entirely new manufacturing processes. Increasing yield and reducing costs relies on imposing the highest quality at every stage.
Why you should care about SiC figures of merit
2022年6月10日
SiC semiconductors are becoming ubiquitous in power conversion equipment, particularly in the areas of EVs, solar and energy storage systems. This article reviews applications and explores the figures of merit that can be used to compare devices.
How robust testing forms part of the SiC supply chain
2022年6月10日
In high reliability/availability applications, SiC semiconductors are seen as emerging technology. This article explains their benefits and how an end-to-end supply chain with robust testing makes SiC a safe design option.
Considerations when designing with wide bandgap devices
SiC and GaN wide bandgap semiconductor switches can provide a step improvement in efficiency in power converters. Engineers should be aware that they have different secondary characteristics compared with Si-MOSFETS and IGBTs.
Selecting wide bandgap devices for motor control applications
By
Milan Ivkovic
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2021年12月20日
When it comes to smart control applications, it’s worth taking a step back to consider when and if the switch to wide bandgap from MOSFET or IGBT makes sense. When the answer is yes, then the decision is whether SiC or GaN is the way to go.
Advances in wide-bandgap semiconductors for vehicles
By
Jason Struble
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2021年8月24日
See the technical and cost comparisons between older silicon IGBT and MOSFET technologies and newer generation silicon carbide switches.
EV charging: The drive for faster charging speeds and higher efficiency
2021年8月11日
Fast DC chargers and wide-bandgap silicon carbide switches are key to improved EV charging.
Three design freedoms enabled by SiC technology
By
Milan Ivkovic
-
2021年4月17日
Even with the undeniable performance and potential of silicon carbide (SiC) technology, some designers may be hesitant initially to tackle new projects using SiC.