STMicroelectronics SCTH90N65G2V-7 silicon carbide power MOSFET

This silicon carbide Power MOSFET device has been developed using ST's advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low ON-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature.

Key features

• Very High Operating Junction Temperature Capability (TJ = 175 °C)
• Very Fast and Robust Intrinsic Body Diode
• Extremely Low Gate Charge and Input Capacitances
• Automotive Grade Version Available

Additional features

• Low ON-state resistance: 18 mΩ typ. @ 25 °C
• High current capability: continuous drain current (ID)  116 A max. @ 25 °C
• Simple to drive
• Broad portfolio of 650 V and 1200 V SiC MOSFETs in thru-hole and SMD technology

Applications

• Switching Applications
• Power Supply for Renewable Energy Systems
• High Frequency DC-DC Converters